Diffuse photoelectric sensor featuring a single-channel phototransistor output. Designed for through-hole mounting, this sensor operates with a 1.8V supply voltage and handles a forward current of 50mA. Key electrical specifications include a collector-emitter breakdown voltage of 24V and a reverse breakdown voltage of 2V. The sensor has a sensing distance of 0.22 inches and operates within a temperature range of -40°C to 85°C, utilizing an 890nm wavelength.
MountingThrough Hole
Power100mW
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Technical Specifications
TT OPB750N technical specifications.
General
| Collector Emitter Breakdown Voltage | 24V |
| Collector Emitter Voltage (VCEO) | 24V |
| Collector-emitter Voltage-Max | 24V |
| Forward Current | 50mA |
| Input Current | 40mA |
| Max Breakdown Voltage | 24V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.8V |
| Output Type | Phototransistor |
| Output Voltage | 24V |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Reverse Breakdown Voltage | 2V |
| Reverse Voltage | 2V |
| Reverse Voltage (DC) | 2V |
| RoHS Compliant | Yes |
| Sensing Distance | 0.22inch |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB750N Datasheet
Download the complete datasheet for TT OPB750N to view detailed technical specifications.
No datasheet is available for this part.