Transmissive photointerrupter featuring a phototransistor output. This general-purpose optical sensor operates with a 890nm wavelength and a 30V collector-emitter breakdown voltage. It supports a 50mA forward current and 20mA input current, with a maximum collector current of 30mA. The component is housed in a plastic package with a 9.53mm slot width, designed for chassis or screw mounting. Operating temperature range is -40°C to 80°C, and it is RoHS compliant.
MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB810W51Z technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Height | 11.1mm |
| Input Current | 20mA |
| Lead Free | Lead Free |
| Material | Plastic |
| Max Collector Current | 30mA |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 30mA |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Output Type | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Breakdown Voltage | 2V |
| Reverse Voltage (DC) | 2V |
| RoHS Compliant | Yes |
| Termination | Lead Wire |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
| Width | 30.99mm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB810W51Z Datasheet
Download the complete datasheet for TT OPB810W51Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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