Transistor output slotted optical sensor featuring a 5.1mm slot width and 1-channel phototransistor output. This RoHS compliant component operates with a 30V collector-emitter breakdown voltage and a 50mA forward current, with a maximum collector current of 30mA. Designed for chassis, panel, or screw mounting, it utilizes infrared (IR) touchscreen technology with an 890nm wavelength and a sensing distance of 0.2 inches. Operating temperature range is -40°C to 85°C, with a power dissipation of 100mW.
MountingChassis Mount, Panel, Screw
Power100mW
Quick Jump:
Technical Specifications
TT OPB816Z technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Panel, Screw |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.8V |
| Output Configuration | Phototransistor |
| Output Current | 30mA |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 2V |
| RoHS Compliant | Yes |
| Sensing Distance | 0.2inch |
| Termination | Lead Wire |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB816Z Datasheet
Download the complete datasheet for TT OPB816Z to view detailed technical specifications.
No datasheet is available for this part.
Product Images
