The OPB830W51 is a phototransistor with a collector emitter breakdown voltage of 30V and a forward current of 50mA. It is designed for chassis mount applications and operates within a temperature range of -40 to 80°C. The device has a power dissipation of 100mW and is available in a plastic package-4 configuration.
MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB830W51 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Forward Current | 50mA |
| Max Collector Current | 30mA |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Reverse Breakdown Voltage | 2V |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
TT OPB830W51 Datasheet
Download the complete datasheet for TT OPB830W51 to view detailed technical specifications.
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