Transistor output slotted optical sensor featuring a 3.18mm slot width and 1-channel operation. This component offers a 30V collector-emitter breakdown voltage and a 50mA forward current. With an infrared touchscreen sensing distance of 0.125 inches and an 880nm wavelength, it operates within a -40°C to 80°C temperature range. The plastic package-4 design supports chassis and screw mounting.
MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB830W51Z technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Height
10.54mm
Input Current
20mA
Length
23.75mm
Max Breakdown Voltage
30V
Max Collector Current
30mA
Max Operating Temperature
80°C
Min Operating Temperature
-40°C
Mount
Chassis Mount, Screw
Number of Channels
1
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Breakdown Voltage
2V
Reverse Voltage (DC)
2V
RoHS Compliant
Yes
Sensing Distance
0.125inch
Touchscreen
Infrared (IR)
Wavelength
880nm
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
TT OPB830W51Z Datasheet
Download the complete datasheet for TT OPB830W51Z to view detailed technical specifications.
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