1-channel phototransistor output slotted optical sensor featuring a 3.18mm slot width. Offers a 30V collector-emitter breakdown voltage and a 50mA forward current. With a 100mW power dissipation and an operating temperature range of -40°C to 80°C, this RoHS compliant component is housed in a plastic package with chassis or screw mounting options.
MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB841W55Z technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Height
10.54mm
Input Current
20mA
Lead Free
Lead Free
Length
23.75mm
Material
Plastic
Max Collector Current
30mA
Max Operating Temperature
80°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Chassis Mount, Screw
Number of Channels
1
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Breakdown Voltage
2V
Reverse Voltage (DC)
2V
RoHS Compliant
Yes
Wavelength
880nm
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
TT OPB841W55Z Datasheet
Download the complete datasheet for TT OPB841W55Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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