TT
OPB847
Transistor Output Slotted Switch, 1-Channel, 2.54mm Slot Width, HERMETIC SEALED, ROHS COMPLIANT PACKAGE-4
MountingThrough Hole
Power100mW
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Technical Specifications
TT OPB847 technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
20000ns
Forward Current
50mA
Max Breakdown Voltage
30V
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Mount
Through Hole
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Response Time
12us
Reverse Breakdown Voltage
2V
RoHS Compliant
Yes
Sensing Distance
0.1inch
Touchscreen
Infrared (IR)
Wavelength
890nm
Compliance
RoHS
Compliant
Datasheet
TT OPB847 Datasheet
Download the complete datasheet for TT OPB847 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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