Slotted optical sensor featuring a phototransistor output. Maximum collector-emitter voltage is 24V with a maximum collector current of 20mA. Operates with a forward current of 50mA and a sensing distance of 4.5mm. This component has a wavelength of 940nm and a power dissipation of 100mW. Dimensions include a height of 11.43mm, length of 21.83mm, and width of 16.5mm. Mounting is snap-in with lead wire termination.
MountingSnap in
Power100mW
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Technical Specifications
TT OPB850A technical specifications.
General
Collector Emitter Breakdown Voltage
24V
Collector Emitter Voltage (VCEO)
24V
Collector-emitter Voltage-Max
24V
Forward Current
50mA
Height
11.43mm
Input Current
20mA
Lead Free
Lead Free
Length
21.83mm
Max Breakdown Voltage
24V
Max Collector Current
20mA
Max Operating Temperature
75°C
Min Operating Temperature
-20°C
Max Power Dissipation
100mW
Mount
Snap in
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Breakdown Voltage
5V
Reverse Voltage (DC)
5V
RoHS Compliant
Yes
Sensing Distance
4.5mm
Termination
Lead Wire
Touchscreen
Infrared (IR)
Wavelength
940nm
Width
16.5mm
Compliance
RoHS
Compliant
Datasheet
TT OPB850A Datasheet
Download the complete datasheet for TT OPB850A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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