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Technical Specifications
TT OPB856Z technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector-emitter Voltage-Max
30V
Forward Current
40mA
Input Current
20mA
Lead Free
Lead Free
Max Breakdown Voltage
30V
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Output Configuration
Phototransistor
Output Current
1.8mA
Output Voltage
30V
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
RoHS Compliant
Yes
Sensing Distance
12inch
Touchscreen
Infrared (IR)
Wavelength
935nm
Compliance
RoHS
Compliant
Datasheet
TT OPB856Z Datasheet
Download the complete datasheet for TT OPB856Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.