The OPB862N51 phototransistor is a single-element, infrared sensor with a wavelength of 880nm and a collector-emitter breakdown voltage of 30V. It can handle a maximum forward current of 50mA and a maximum collector current of 30mA. The device is designed for chassis mount, through-hole mounting and is compliant with RoHS regulations. The OPB862N51 has a maximum operating temperature of 85°C and a minimum operating temperature of -40°C.
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TT OPB862N51 technical specifications.
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Through Hole |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 2V |
| RoHS Compliant | Yes |
| Touchscreen | Infrared (IR) |
| Wavelength | 880nm |
| RoHS | Compliant |
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