MountingThrough Hole, Screw
Power100mW
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Technical Specifications
TT OPB865T51 technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Lead Free
Lead Free
Max Breakdown Voltage
30V
Max Collector Current
30mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Mount
Through Hole, Screw
Number of Elements
1
Output Configuration
Phototransistor
Output Current
30mA
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Reach SVHC Compliant
No
Reverse Breakdown Voltage
2V
Reverse Voltage (DC)
2V
RoHS Compliant
Yes
Sensing Distance
0.125inch
Touchscreen
Infrared (IR)
Wavelength
890nm
Compliance
RoHS
Compliant
Datasheet
TT OPB865T51 Datasheet
Download the complete datasheet for TT OPB865T51 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.