Transistor output slotted optical sensor featuring a 3.11mm slot width and 1-channel operation. This through-hole, chassis-mount component utilizes an infrared touchscreen with an 890nm wavelength. Key electrical specifications include a 30V collector-emitter breakdown voltage and a 50mA forward current, with a maximum power dissipation of 100mW. Operating temperature range spans from -40°C to 85°C.
MountingChassis Mount, Through Hole
Power100mW
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Technical Specifications
TT OPB870N11 technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Height
10.8mm
Length
12.32mm
Max Breakdown Voltage
30V
Max Collector Current
30mA
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Chassis Mount, Through Hole
Number of Elements
1
Output Configuration
Phototransistor
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reverse Breakdown Voltage
2V
RoHS Compliant
Yes
Sensing Distance
0.125inch
Touchscreen
Infrared (IR)
Wavelength
890nm
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
TT OPB870N11 Datasheet
Download the complete datasheet for TT OPB870N11 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.