Transistor output slotted optical sensor featuring a 3.11mm slot width and 1-channel operation. This through-hole, chassis-mount component utilizes an infrared touchscreen with an 890nm wavelength. Key electrical specifications include a 30V collector-emitter breakdown voltage and a 50mA forward current, with a maximum power dissipation of 100mW. Operating temperature range spans from -40°C to 85°C.
MountingChassis Mount, Through Hole
Power100mW
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Technical Specifications
TT OPB870N11 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Height | 10.8mm |
| Length | 12.32mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Chassis Mount, Through Hole |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 2V |
| RoHS Compliant | Yes |
| Sensing Distance | 0.125inch |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
| Width | 6.35mm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB870N11 Datasheet
Download the complete datasheet for TT OPB870N11 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.