The OPB877L55 phototransistor has a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It can handle a maximum power dissipation of 100mW and operates within a temperature range of -40°C to 85°C. The device is available in a ROHS compliant, plastic package with 4 pins and is suitable for through hole mounting. It is not radiation hardened and is compliant with RoHS regulations.
MountingThrough Hole, Screw
Power100mW
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Technical Specifications
TT OPB877L55 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole, Screw |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 2V |
| RoHS Compliant | Yes |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB877L55 Datasheet
Download the complete datasheet for TT OPB877L55 to view detailed technical specifications.
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