Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the TT OPB881N51Z datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
TT OPB881N51Z technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Free Hanging |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB881N51Z Datasheet
Download the complete datasheet for TT OPB881N51Z to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.