The OPB881P51Z is a RoHS compliant, infrared phototransistor with a wavelength of 890nm. It can withstand a collector-emitter voltage of up to 30V and a forward current of 50mA. The device is designed for chassis mount applications and operates within a temperature range of -40°C to 85°C. It is suitable for use in optical sensing applications.
MountingChassis Mount
Power100mW
Quick Jump:
Technical Specifications
TT OPB881P51Z technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| RoHS Compliant | Yes |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB881P51Z Datasheet
Download the complete datasheet for TT OPB881P51Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.