The OPB892T51Z is a phototransistor with a wavelength of 890nm and a collector-emitter breakdown voltage of 30V. It can handle a maximum collector current of 30mA and a power dissipation of 100mW. The device is mounted via screws to a chassis and operates within a temperature range of -40°C to 85°C. It is compliant with RoHS regulations and is available in a ROHS compliant, plastic package-4.
MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB892T51Z technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 2V |
| RoHS Compliant | Yes |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.