N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 8A continuous drain current. Surface mountable in a TO-263 package with gull-wing leads, this single-element silicon transistor offers a maximum drain-source resistance of 850 mOhm at 10V. Key specifications include a typical gate charge of 42 nC and a maximum power dissipation of 134W, operating across a temperature range of -55°C to 150°C.
PackageTO-263
MountingSurface Mount
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Technical Specifications
Unisonic Technologies UF840-TQ2-T technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
TO-263
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.67(Max)
Package Width (mm)
9.65(Max)
Package Height (mm)
4.83(Max)
Seated Plane Height (mm)
5.08(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
8A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
850@10VmOhm
Typical Gate Charge @ Vgs
42@10VnC
Typical Gate Charge @ 10V
42nC
Typical Input Capacitance @ Vds
1225@25VpF
Maximum Power Dissipation
134000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
200pF
Compliance
Cage Code
SDM38
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Unisonic Technologies UF840-TQ2-T Datasheet
Download the complete datasheet for Unisonic Technologies UF840-TQ2-T to view detailed technical specifications.
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