N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 8A continuous drain current. This single element transistor utilizes silicon material and is housed in a TO-220F1 package with 3 pins and a tab, designed for through-hole mounting. Key electrical characteristics include a ±30V gate-source voltage, 4V gate threshold voltage, and 850mΩ drain-source resistance at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 44000mW.
PackageTO-220F1
MountingThrough Hole
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Technical Specifications
Unisonic Technologies UF840G-TF1-T technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220F1
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.36(Max)
Package Width (mm)
4.9(Max)
Package Height (mm)
16.07(Max)
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
8A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
850@10VmOhm
Typical Gate Charge @ Vgs
42@10VnC
Typical Gate Charge @ 10V
42nC
Typical Input Capacitance @ Vds
1225@25VpF
Maximum Power Dissipation
44000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
200pF
Compliance
Cage Code
SDM38
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Unisonic Technologies UF840G-TF1-T Datasheet
Download the complete datasheet for Unisonic Technologies UF840G-TF1-T to view detailed technical specifications.
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