N-channel enhancement mode silicon power MOSFET featuring 500V drain-source voltage and 8A continuous drain current. This through-hole component is housed in a TO-220F package with a 3-pin configuration and tab. Key specifications include a maximum gate threshold voltage of 4V, 850mOhm drain-source resistance at 10V, and 42nC typical gate charge. Maximum power dissipation is 44000mW, with operating temperatures ranging from -55°C to 150°C.
PackageTO-220F
MountingThrough Hole
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Technical Specifications
Unisonic Technologies UF840G-TF3-T technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220F
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
15.3(Max)
Seated Plane Height (mm)
19.8(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220-F
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
8A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
850@10VmOhm
Typical Gate Charge @ Vgs
42@10VnC
Typical Gate Charge @ 10V
42nC
Typical Input Capacitance @ Vds
1225@25VpF
Maximum Power Dissipation
44000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
200pF
Compliance
Cage Code
SDM38
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Unisonic Technologies UF840G-TF3-T Datasheet
Download the complete datasheet for Unisonic Technologies UF840G-TF3-T to view detailed technical specifications.
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