N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 8A continuous drain current. This single-element silicon transistor is housed in a TO-263 surface-mount package with gull-wing leads, offering a maximum power dissipation of 134W. Key specifications include a ±30V gate-source voltage, 4V gate threshold voltage, and 850mΩ maximum drain-source on-resistance. The TO-263 package measures 10.67mm x 9.65mm x 4.83mm and operates within a temperature range of -55°C to 150°C.
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| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | TO-263 |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.67(Max) |
| Package Width (mm) | 9.65(Max) |
| Package Height (mm) | 4.83(Max) |
| Seated Plane Height (mm) | 5.08(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 8A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 850@10VmOhm |
| Typical Gate Charge @ Vgs | 42@10VnC |
| Typical Gate Charge @ 10V | 42nC |
| Typical Input Capacitance @ Vds | 1225@25VpF |
| Maximum Power Dissipation | 134000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 200pF |
| Cage Code | SDM38 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
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