N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 8A continuous drain current. This single transistor, constructed with Silicon, is housed in a TO-220F package with a 3-pin through-hole mounting configuration. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 850mΩ at 10V, and a maximum power dissipation of 44W. Operating temperature range is from -55°C to 150°C.
PackageTO-220F
MountingThrough Hole
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Technical Specifications
Unisonic Technologies UF840L-TF3-T technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220F
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
15.3(Max)
Seated Plane Height (mm)
19.8(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220-F
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
8A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
850@10VmOhm
Typical Gate Charge @ Vgs
42@10VnC
Typical Gate Charge @ 10V
42nC
Typical Input Capacitance @ Vds
1225@25VpF
Maximum Power Dissipation
44000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
200pF
Compliance
Cage Code
SDM38
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Unisonic Technologies UF840L-TF3-T Datasheet
Download the complete datasheet for Unisonic Technologies UF840L-TF3-T to view detailed technical specifications.
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