N-Channel Silicon Carbide Power MOSFET, 1200V breakdown voltage, 65A continuous drain current, and 0.045 ohm on-resistance. Features a single element design within a TO-247 package, offering 3 terminals. Operates across a wide temperature range from -55°C to 175°C.
Quick Jump:
Technical Specifications
United Silicon Carbide UJ3C120040K3S technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-247
Number of Elements
1
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
United Silicon Carbide UJ3C120040K3S Datasheet
Download the complete datasheet for United Silicon Carbide UJ3C120040K3S to view detailed technical specifications.
No datasheet is available for this part.