N-Channel Silicon Carbide Power MOSFET, 1200V breakdown voltage, 65A continuous drain current, and 0.045 ohm on-resistance. Features a single element design within a TO-247 package, offering 3 terminals. Operates across a wide temperature range from -55°C to 175°C.
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Technical Specifications
United Silicon Carbide UJ3C120040K3S technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
United Silicon Carbide UJ3C120040K3S Datasheet
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