This N-channel power MOSFET is rated for 100 V drain-to-source voltage and 130 A continuous drain current. It uses SGT technology in a TO-263 package and is specified for 250 W power dissipation with a 2.5 V to 3.5 V gate threshold range. Typical on-resistance is 3.6 mΩ at 10 V gate drive, with 91 nC total gate charge, 5195 pF input capacitance, 875 pF output capacitance, and 30 pF reverse transfer capacitance.
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Vergiga VS1602GMH technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | 20V |
| Continuous Drain Current | 130A |
| Power Dissipation | 250W |
| Gate Threshold Voltage | 2.5 to 3.5V |
| RDS(on) Typ @ VGS=10V | 3.6mΩ |
| Total Gate Charge @ 10V | 91nC |
| Input Capacitance | 5195pF |
| Output Capacitance | 875pF |
| Reverse Transfer Capacitance | 30pF |
| Technology | SGT |
| Package | TO-263 |
| RoHS | Compliant |
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