This device is an 85 V N-channel power MOSFET rated for 124 A continuous drain current at case temperature of 25 °C. It uses SGT technology and is housed in a TO-263 package. The datasheet specifies a typical drain-source on-resistance of 4.9 mΩ at 10 V gate drive and a gate threshold voltage range of 2.5 V to 3.5 V. Maximum power dissipation is 150 W, and the operating junction temperature range is -55 °C to 175 °C. Typical dynamic characteristics include 3695 pF input capacitance and 57 nC total gate charge at the stated test conditions.
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Vergiga VSM005NE8HS-G technical specifications.
| Channel Type | N-Channel |
| Drain-Source Breakdown Voltage | 85V |
| Continuous Drain Current | 124A |
| Continuous Drain Current at 100°C | 87A |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 2.5 to 3.5V |
| Drain-Source On-Resistance Typ @ VGS=10V | 4.9mΩ |
| Maximum Power Dissipation | 150W |
| Input Capacitance Typ | 3695pF |
| Output Capacitance Typ | 1225pF |
| Reverse Transfer Capacitance Typ | 35pF |
| Total Gate Charge Typ | 57nC |
| Avalanche Energy | 240mJ |
| Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case Typ | 1°C/W |
| Technology | SGT |
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