This device is an N-channel advanced power MOSFET rated for 100 V drain-to-source voltage and 135 A continuous drain current. It uses VitoMOS II technology and is specified for low on-resistance at a 4.5 V gate drive condition. The part is described as an enhancement-mode device and is 100% avalanche tested. It uses Pb-free lead plating and is marked RoHS compliant.
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Vergiga VSP004N10MS-G technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 135A |
| Operating Mode | Enhancement Mode |
| Technology | VitoMOS II |
| RDS(on) Gate Test Condition | 4.5V |
| Avalanche Test | 100% |
| RoHS | Compliant |
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