The 1N5062GP-E3 is a silicon rectifier diode with a maximum operating temperature of 175 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It features an axial terminal position and a DO-204AC package code. The diode has a maximum reverse voltage of 800 volts and is constructed from a single silicon element.
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Technical Specifications
Vishay 1N5062GP-E3 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-204AC |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Vishay 1N5062GP-E3 Datasheet
Download the complete datasheet for Vishay 1N5062GP-E3 to view detailed technical specifications.
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