The 2KBP08M-M4/51 is a silicon bridge rectifier diode with a maximum operating temperature of 165 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a maximum reverse voltage of 800 volts and is available in a 4-pin R-PSIP-W4 package. The diode element is made of silicon and has a single terminal position. The device is a bridge rectifier diode with four elements.
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Technical Specifications
Vishay 2KBP08M-M4/51 technical specifications.
General
| Max Operating Temperature | 165 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
| Breakdown Voltage-Min | 800 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Vishay 2KBP08M-M4/51 Datasheet
Download the complete datasheet for Vishay 2KBP08M-M4/51 to view detailed technical specifications.
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