The 2KBP10M-E4 is a silicon bridge rectifier diode with a maximum operating temperature of 165 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has 4 terminals and is a single diode element. The diode is made of silicon and has a maximum reverse voltage of 1000 volts. It is packaged in a 4-pin R-PSIP-W4 package.
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Technical Specifications
Vishay 2KBP10M-E4 technical specifications.
General
| Max Operating Temperature | 165 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Pin Count | 4 |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Vishay 2KBP10M-E4 Datasheet
Download the complete datasheet for Vishay 2KBP10M-E4 to view detailed technical specifications.
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