The 2N5116-E3 is a P-channel junction field-effect transistor (JFET) packaged in a TO-206AA case and mounted through a hole. It can handle a continuous drain current of -25mA and a maximum power dissipation of 500mW. The device operates within a temperature range of -55°C to 200°C. The 2N5116-E3 is compliant with RoHS regulations.
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Vishay 2N5116-E3 technical specifications.
| Package/Case | TO-206AA |
| Continuous Drain Current (ID) | -25mA |
| Current Rating | -50mA |
| Drain to Source Resistance | 150R |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 200 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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