Vishay
2N5460-E3
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA, PLASTIC, TO-92, 3 PIN
PackageTO-92
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Vishay 2N5460-E3 technical specifications.
General
| Package/Case | TO-92 |
| Drain to Source Breakdown Voltage | 40V |
| Gate to Source Voltage (Vgs) | 40V |
| Package Quantity | 500 |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay 2N5460-E3 Datasheet
Download the complete datasheet for Vishay 2N5460-E3 to view detailed technical specifications.
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