
N-channel MOSFET, general purpose small signal transistor designed for surface mount applications. Features a continuous drain current of 115mA and a drain-to-source breakdown voltage of 60V. Offers a low drain-source on-resistance of 7.5 Ohms and a gate-to-source voltage rating of 20V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. Packaged in a compact SOT-23 (TO-236) 3-pin package, suitable for tape and reel deployment.
Vishay 2N7002-E3 technical specifications.
| Package/Case | TO-236 |
| Continuous Drain Current (ID) | 115mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 7.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 7.5R |
| Dual Supply Voltage | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Rds On Max | 7.5R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 2.1V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 7ns |
| Voltage | 60V |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay 2N7002-E3 to view detailed technical specifications.
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