N-channel MOSFET transistor featuring a 60V drain-source breakdown voltage and 115mA continuous drain current. This general-purpose small signal FET offers a low drain-source on-resistance of 7.5 Ohms and a gate-source voltage rating of 20V. Packaged in a compact TO-236 (SOT-23) surface-mount case, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW.
PackageTO-236
Voltage60V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay 2N7002-T1-E3 technical specifications.
General
Package/Case
TO-236
Continuous Drain Current (ID)
115mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
7.5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
7.5R
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Nominal Vgs
2.1V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
200mW
Radiation Hardening
No
Rds On Max
7.5R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2.1V
Voltage
60V
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay 2N7002-T1-E3 Datasheet
Download the complete datasheet for Vishay 2N7002-T1-E3 to view detailed technical specifications.
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