
The 2N7002-T1-GE3 is a surface mount N-channel JFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 200mW and a continuous drain current of 115mA. The device features a drain to source breakdown voltage of 60V and a drain to source resistance of 7.5R. It is packaged in a TO-236-3 package and is RoHS compliant.
Sign in to ask questions about the Vishay 2N7002-T1-GE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay 2N7002-T1-GE3 technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 115mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 7.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 40V |
| Input Capacitance | 50pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7.5R |
| RoHS Compliant | Yes |
| Weight | 0.050717oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay 2N7002-T1-GE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
