The 2W02G-E4/51 is a silicon bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It features a 4-pin package type R-PBCY-W4 and is designed for use in bridge rectifier applications. The diode element material is silicon and the diode type is a bridge rectifier diode. The device has a minimum breakdown voltage of 200V and a maximum reverse voltage of 200V.
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Vishay 2W02G-E4/51 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | BOTTOM |
| Pin Count | 4 |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 200 |
| Breakdown Voltage-Min | 200 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Vishay 2W02G-E4/51 to view detailed technical specifications.
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