P-channel, through-hole mounted JFET designed for general-purpose small signal applications. Features a continuous drain current of 50mA and a drain-to-source breakdown voltage of -40V. Offers a maximum drain-source on-resistance of 250 Ohms and an input capacitance of 3.5pF. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 375mW. Packaged in a hermetically sealed TO-72 metal can with tin-matte plated contacts.
PackageTO-72
MountingThrough Hole
PolarityP-CHANNEL
Power375mW
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Technical Specifications
Vishay 3N163-E3 technical specifications.
General
Package/Case
TO-72
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
50mA
Drain to Source Breakdown Voltage
-40V
Drain to Source Resistance
250R
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
250R
Gate to Source Voltage (Vgs)
30V
Input Capacitance
3.5pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
375mW
Mount
Through Hole
Nominal Vgs
-2.5V
Number of Channels
1
Package Quantity
200
Packaging
Bulk
Polarity
P-CHANNEL
Power Dissipation
375mW
Rds On Max
250R
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-2.5V
Turn-Off Delay Time
25ns
Turn-On Delay Time
5ns
Compliance
RoHS
Compliant
Datasheet
Vishay 3N163-E3 Datasheet
Download the complete datasheet for Vishay 3N163-E3 to view detailed technical specifications.
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