P-channel, through-hole mounted JFET designed for general-purpose small signal applications. Features a continuous drain current of 50mA and a drain-to-source breakdown voltage of -40V. Offers a maximum drain-source on-resistance of 250 Ohms and an input capacitance of 3.5pF. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 375mW. Packaged in a hermetically sealed TO-72 metal can with tin-matte plated contacts.
PackageTO-72
MountingThrough Hole
PolarityP-CHANNEL
Power375mW
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Technical Specifications
Vishay 3N163-E3 technical specifications.
General
| Package/Case | TO-72 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 50mA |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 250R |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 250R |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.5pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375mW |
| Mount | Through Hole |
| Nominal Vgs | -2.5V |
| Number of Channels | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 375mW |
| Rds On Max | 250R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -2.5V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay 3N163-E3 Datasheet
Download the complete datasheet for Vishay 3N163-E3 to view detailed technical specifications.
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