This device is an NPN surface-mount small signal transistor built in a SOT-23 package with epitaxial planar die construction. It is intended for switching, AF driver, and amplifier applications. The transistor is rated for 45 V collector-emitter voltage, 5 V emitter-base voltage, 800 mA collector current, and 310 mW power dissipation at a substrate temperature of 50 °C. Operating and storage temperature range is -65 °C to +150 °C, and the -40 gain group is specified at hFE 250 to 600 at VCE = 1.0 V and IC = 100 mA.
Sign in to ask questions about the Vishay BC817-40 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay BC817-40 technical specifications.
| Max Operating Temperature | 150 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Vishay BC817-40 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
