This device is an NPN silicon epitaxial planar small-signal transistor intended for switching and AF amplifier applications. It is supplied in a SOT-23 plastic package with base, emitter, and collector pin configuration and is suited for automatic insertion in thick- and thin-film circuits. For the BC846 variant, the datasheet specifies 65 V collector-emitter voltage, 80 V collector-base voltage, and 100 mA continuous collector current. The BC846A gain group provides DC current gain from 110 to 220 at VCE = 5 V and IC = 2 mA. Power dissipation is rated to 310 mW at TSB = 50 °C, with junction temperature up to 150 °C and storage temperature from -65 °C to +150 °C.
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Vishay BC846A technical specifications.
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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