NPN phototransistor chip for optical sensing, featuring an 850nm wavelength and a 15° viewing angle. This through-hole component offers a 70V collector-emitter breakdown voltage and a 50mA current rating, with a maximum power dissipation of 150mW. Encased in a 2-pin T-1 3/4 radial package with a clear, domed lens, it operates within a -40°C to 100°C temperature range.
PackageRadial
Current Rating50mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Vishay BPV11 technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
130mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Contact Plating
Tin, Silver
Current Rating
50mA
Fall Time
5us
Height
8mm
Lead Free
Lead Free
Length
5.75mm
Lens Color
Clear
Lens Style
Domed, TRANSPARENT, WATER CLEAR
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
150mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Material
SILICON
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Power Consumption
150mW
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
15°
Wavelength
850nm
Width
5.75mm
Compliance
RoHS
Compliant
Datasheet
Vishay BPV11 Datasheet
Download the complete datasheet for Vishay BPV11 to view detailed technical specifications.
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