NPN phototransistor with a 930nm wavelength, featuring a 70V collector-emitter breakdown voltage and a maximum collector current of 50mA. This through-hole component utilizes a domed lens and operates within a temperature range of -40°C to 100°C, with a power dissipation of 150mW. The silicon chip is housed in a 2-pin T-1 3/4 radial package, offering a 15° viewing angle.
PackageRadial
Current Rating50mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Vishay BPV11F technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
130mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Current Rating
50mA
Fall Time
5us
Height
8.6mm
Lead Free
Lead Free
Length
5.75mm
Lens Style
Domed
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
150mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Material
SILICON
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Power Consumption
150mW
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
15°
Wavelength
930nm
Width
5.75mm
Compliance
RoHS
Compliant
Datasheet
Vishay BPV11F Datasheet
Download the complete datasheet for Vishay BPV11F to view detailed technical specifications.
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