
NPN phototransistor chip for optical sensing applications. Features a 30V collector-emitter voltage (VCEO) and a maximum collector current of 50mA. Operates within a temperature range of -40°C to 100°C with 100mW power dissipation. Emits light at 825nm with a 40° viewing angle. Packaged in a clear, flat lens with a radial, through-hole mount. RoHS compliant and lead-free.
Vishay BPW16N technical specifications.
| Package/Case | Radial |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 32V |
| Current Rating | 50mA |
| Lead Free | Lead Free |
| Lens Color | Clear |
| Lens Style | Flat, TRANSPARENT, WATER CLEAR |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Orientation | Top View |
| Package Material | SILICON |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Viewing Angle | 40° |
| Wavelength | 825nm |
| RoHS | Compliant |
Download the complete datasheet for Vishay BPW16N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
