NPN phototransistor chip for optical sensing applications. Features a 30V collector-emitter voltage (VCEO) and a maximum collector current of 50mA. Operates within a temperature range of -40°C to 100°C with 100mW power dissipation. Emits light at 825nm with a 40° viewing angle. Packaged in a clear, flat lens with a radial, through-hole mount. RoHS compliant and lead-free.
PackageRadial
Current Rating50mA
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Vishay BPW16N technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
32V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
32V
Current Rating
50mA
Lead Free
Lead Free
Lens Color
Clear
Lens Style
Flat, TRANSPARENT, WATER CLEAR
Max Breakdown Voltage
32V
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Elements
1
Orientation
Top View
Package Material
SILICON
Package Quantity
5000
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
40°
Wavelength
825nm
Compliance
RoHS
Compliant
Datasheet
Vishay BPW16N Datasheet
Download the complete datasheet for Vishay BPW16N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
