NPN silicon phototransistor with 850nm infrared sensitivity. Features a 70V collector-emitter breakdown voltage and 50mA maximum collector current. Housed in a 3-pin TO-18 package with a domed lens for top-view orientation. Operates from -40°C to 125°C with 250mW power dissipation. RoHS compliant and lead-free.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power250mW
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Technical Specifications
Vishay BPW77NA technical specifications.
General
Package/Case
TO-18
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Height
6.15mm
Lead Free
Lead Free
Length
5.5mm
Lens Style
Domed
Max Collector Current
50mA
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
250mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Top View
Package Material
SILICON
Package Quantity
1000
Packaging
Bulk
Polarity
NPN
Power Consumption
250mW
Power Dissipation
250mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
10°
DC Rated Voltage
70V
Wavelength
850nm
Width
5.5mm
Compliance
RoHS
Compliant
Datasheet
Vishay BPW77NA Datasheet
Download the complete datasheet for Vishay BPW77NA to view detailed technical specifications.
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