NPN phototransistor chip for optical sensing applications. Features an 850nm wavelength, 70V collector-emitter breakdown voltage, and a maximum collector current of 50mA. Housed in a 3mm diameter, T-package with a domed, transparent lens and through-hole mounting. Operates across a temperature range of -40°C to 100°C with a 50° viewing angle.
PackageT
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
Vishay BPW85 technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Diameter
3mm
Fall Time
2.3us
Height
4.5mm
Lead Free
Lead Free
Lens Color
Clear
Lens Style
Domed, TRANSPARENT
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
150mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Material
SILICON
Package Quantity
5000
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Viewing Angle
50°
Wavelength
850nm
Compliance
RoHS
Not Compliant
Datasheet
Vishay BPW85 Datasheet
Download the complete datasheet for Vishay BPW85 to view detailed technical specifications.
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