NPN phototransistor chip for optical sensing applications. Features 70V collector-emitter breakdown voltage and 50mA continuous collector current. Operates with a 300mV collector-emitter saturation voltage and 100mW maximum power dissipation. This through-hole component has a 25° viewing angle and a 850nm wavelength sensitivity, housed in a clear, domed T-1 package.
PackageT
Current Rating50mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Vishay BPW85A technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Current Rating
50mA
Lens Color
Clear
Lens Style
Domed, TRANSPARENT
Max Breakdown Voltage
70V
Max Collector Current
100mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Elements
1
Orientation
Top View
Package Material
SILICON
Package Quantity
5000
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
25°
Wavelength
850nm
Compliance
RoHS
Compliant
Datasheet
Vishay BPW85A Datasheet
Download the complete datasheet for Vishay BPW85A to view detailed technical specifications.
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