NPN phototransistor chip for optical sensing applications. Features 70V collector-emitter breakdown voltage and 50mA maximum collector current. Operates with a 850nm wavelength and 25° viewing angle. Housed in a T-1 package with a domed, transparent lens, suitable for through-hole mounting. Rated for 100mW power dissipation and a temperature range of -40°C to 100°C.
PackageT
Current Rating50mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Vishay BPW85B technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
70V
Collector-emitter Voltage-Max
70V
Current Rating
50mA
Fall Time
2.3us
Height
4.5mm
Length
3.4mm
Lens Color
Clear
Lens Style
Domed, TRANSPARENT, Clear
Max Breakdown Voltage
70V
Max Collector Current
50mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Package Material
SILICON
Package Quantity
5000
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Viewing Angle
25°
Wavelength
850nm
Width
3.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay BPW85B Datasheet
Download the complete datasheet for Vishay BPW85B to view detailed technical specifications.
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