The BS870/E9 is a N-CHANNEL MOSFET from Vishay with a maximum drain to source breakdown voltage of 60V and a continuous drain current of 250mA. It features a low drain to source resistance of 5 ohms and a power dissipation of 8.3 milliwatts. The device is packaged in a SOT-23 case and is compliant with RoHS regulations.
PackageSOT-23
PolarityN-CHANNEL
Power8.3mW
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Technical Specifications
Vishay BS870/E9 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 250mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5R |
| Gate to Source Voltage (Vgs) | 20V |
| Package Quantity | 30000 |
| Polarity | N-CHANNEL |
| Power Dissipation | 8.3mW |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Vishay BS870/E9 Datasheet
Download the complete datasheet for Vishay BS870/E9 to view detailed technical specifications.
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