The BZG04-10-TR is a unidirectional silicon transient voltage suppressor diode with a minimum breakdown voltage of 11.4V and a maximum non-repetitive peak reverse power dissipation of 300W. It features a DO-214 package with 2 terminals and is suitable for use in applications where voltage suppression is required. The diode is constructed with silicon material and has a maximum power dissipation of 1.25W. The BZG04-10-TR operates over a temperature range of -40 to 150°C.
Vishay BZG04-10-TR technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Breakdown Voltage-Min | 11.4 |
| Non-rep Peak Rev Power Dis-Max | 300 |
| Power Dissipation-Max | 1.25 |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
