The BZV55-B51 is a unidirectional silicon zener diode with a maximum operating temperature of 200 degrees Celsius. It has a power dissipation of 0.4 watts and is packaged in the O-LELF-R2 configuration with 2 terminals at the end. The diode element is made of silicon and has a pin count of 2.
PolarityUNIDIRECTIONAL
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Technical Specifications
Vishay BZV55-B51 technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 0.4 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Vishay BZV55-B51 Datasheet
Download the complete datasheet for Vishay BZV55-B51 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.