The CPV363M4F is a flange mount insulated gate bipolar transistor with a collector emitter breakdown voltage of 600V and a maximum collector current of 16A. It has a maximum power dissipation of 36W and operates within a temperature range of -40°C to 150°C. The transistor is packaged in a bulk package and is not radiation hardened. It is not RoHS compliant.
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| Package/Case | SIP |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.63V |
| Input | Standard |
| Input Capacitance | 1.1nF |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| NTC Thermistor | No |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
