Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, IMS-2, 13 PIN
Vishay CPV363M4K technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Input | Standard |
| Input Capacitance | 740pF |
| Max Collector Current | 11A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| NTC Thermistor | No |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
