Power Field-Effect Transistor, 180A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Vishay FB180SA10 technical specifications.
| Package/Case | SOT-227 |
| Continuous Drain Current (ID) | 180A |
| Current Rating | 180A |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 12.3mm |
| Input Capacitance | 10.7nF |
| Lead Free | Contains Lead |
| Length | 38.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Chassis Mount, Screw |
| Rds On Max | 6.5mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 181ns |
| Turn-On Delay Time | 45ns |
| DC Rated Voltage | 100V |
| Width | 25.7mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
